Please use this identifier to cite or link to this item:
|Title:||In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression|
|Citation:||Zhu, Z., Gong, X., Ivana, Yeo, Y.-C. (2012-02). In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BF03|
|Abstract:||In this paper, we report the first demonstration of In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with a shallow metallic source/drain extension (SDE) and offset n + regions for leakage suppression. A SDE-last process flow was developed, i.e., the Ni-InGaAs metallic SDE was formed last, after formation of n + doped source/drain (S/D) regions. The n + S/D regions were offset from the gate edge with the use of sacrificial spacers. After spacer removal, self-aligned highly-abrupt Ni-InGaAs SDE was formed. Junction leakage between drain and body was effectively suppressed by ∼40 times by the n + S/D regions. © 2012 The Japan Society of Applied Physics.|
|Source Title:||Japanese Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 6, 2018
WEB OF SCIENCETM
checked on Oct 30, 2018
checked on Oct 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.