Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.51.02BF03
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dc.titleIn 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression
dc.contributor.authorZhu, Z.
dc.contributor.authorGong, X.
dc.contributor.authorIvana
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:30:19Z
dc.date.available2014-10-07T04:30:19Z
dc.date.issued2012-02
dc.identifier.citationZhu, Z., Gong, X., Ivana, Yeo, Y.-C. (2012-02). In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BF03
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82518
dc.description.abstractIn this paper, we report the first demonstration of In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with a shallow metallic source/drain extension (SDE) and offset n + regions for leakage suppression. A SDE-last process flow was developed, i.e., the Ni-InGaAs metallic SDE was formed last, after formation of n + doped source/drain (S/D) regions. The n + S/D regions were offset from the gate edge with the use of sacrificial spacers. After spacer removal, self-aligned highly-abrupt Ni-InGaAs SDE was formed. Junction leakage between drain and body was effectively suppressed by ∼40 times by the n + S/D regions. © 2012 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.51.02BF03
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.51.02BF03
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume51
dc.description.issue2 PART 2
dc.description.page-
dc.identifier.isiut000303481400045
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