Please use this identifier to cite or link to this item:
https://doi.org/10.1143/JJAP.51.02BF03
DC Field | Value | |
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dc.title | In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression | |
dc.contributor.author | Zhu, Z. | |
dc.contributor.author | Gong, X. | |
dc.contributor.author | Ivana | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:30:19Z | |
dc.date.available | 2014-10-07T04:30:19Z | |
dc.date.issued | 2012-02 | |
dc.identifier.citation | Zhu, Z., Gong, X., Ivana, Yeo, Y.-C. (2012-02). In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BF03 | |
dc.identifier.issn | 00214922 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82518 | |
dc.description.abstract | In this paper, we report the first demonstration of In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with a shallow metallic source/drain extension (SDE) and offset n + regions for leakage suppression. A SDE-last process flow was developed, i.e., the Ni-InGaAs metallic SDE was formed last, after formation of n + doped source/drain (S/D) regions. The n + S/D regions were offset from the gate edge with the use of sacrificial spacers. After spacer removal, self-aligned highly-abrupt Ni-InGaAs SDE was formed. Junction leakage between drain and body was effectively suppressed by ∼40 times by the n + S/D regions. © 2012 The Japan Society of Applied Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.51.02BF03 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1143/JJAP.51.02BF03 | |
dc.description.sourcetitle | Japanese Journal of Applied Physics | |
dc.description.volume | 51 | |
dc.description.issue | 2 PART 2 | |
dc.description.page | - | |
dc.identifier.isiut | 000303481400045 | |
Appears in Collections: | Staff Publications |
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