Please use this identifier to cite or link to this item:
|Title:||In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process||Authors:||Zhang, X.
|Issue Date:||2011||Citation:||Zhang, X.,Guo, H.,Gong, X.,Zhou, Q.,Lin, H.-Y.,Lin, Y.-R.,Ko, C.-H.,Wann, C.H.,Yeo, Y.-C. (2011). In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 26-27. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2011.5872217||Abstract:||Spacer-less In0.7Ga0.3As n-MOSFETs with self-aligned Ni-InGaAs contacts formed using a direct reaction between Ni and InGaAs were demonstrated. A novel salicide-like metallization process was developed to achieve self-aligned Ni-InGaAs contacts, comprising the steps of Ni reaction with InxGa1xAs and selective removal of excess Ni. Dopantless n-MOSFETs with metallic Ni-InGaAs source/drain (S/D) and n-MOSFETs with Si-doped S/D and Ni-InGaAs contacts were compared. Si implant performed before the metallization effectively suppressed the off-state current I OFF by more than 10 times. © 2011 IEEE.||Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/83839||ISBN:||9781424484928||DOI:||10.1109/VTSA.2011.5872217|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 1, 2020
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.