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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Type:  Article
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 81-100 of 229 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
81Jul-2008Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Tan, B.L.-H.; Balasubramanian, N.; Yeo, Y.-C. 
822013Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivationGong, X.; Han, G. ; Bai, F.; Su, S.; Guo, P.; Yang, Y.; Cheng, R. ; Zhang, D.; Zhang, G.; Xue, C.; Cheng, B.; Pan, J. ; Zhang, Z.; Tok, E.S. ; Antoniadis, D.; Yeo, Y.-C. 
832012Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal annealWang, L.; Su, S.; Wang, W.; Yang, Y.; Tong, Y.; Liu, B.; Guo, P.; Gong, X.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
8421-May-2013Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation studyYang, Y.; Lu Low, K.; Wang, W.; Guo, P.; Wang, L.; Han, G. ; Yeo, Y.-C. 
852014Germanium-Tin on Si avalanche photodiode: Device design and technology demonstrationDong, Y.; Wang, W. ; Xu, X.; Gong, X. ; Lei, D.; Zhou, Q. ; Xu, Z.; Loke, W.K.; Yoon, S.-F.; Liang, G. ; Yeo, Y.-C. 
86Dec-2013Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstrationYang, Y.; Han, G.; Guo, P.; Wang, W.; Gong, X.; Wang, L.; Low, K.L.; Yeo, Y.-C. 
872001Growing cascade correlation networks in two dimensions: A heuristic approachSu, L.; Guan, S.U. ; Yeo, Y.C. 
882011High performance metal-insulator-metal capacitors with Er2O 3 on ALD SiO2 for RF applicationsPhung, T.H.; Srinivasan, D.K.; Steinmann, P.; Wise, R.; Yu, M.-B.; Yeo, Y.-C. ; Zhu, C. 
892006High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tung, C.-H.; Choy, S.-F.; Samudra, G. ; Yeo, Y.-C. 
902012High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stackLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
91Jan-2010High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor depositionLiu, X.; Chin, H.-C.; Tan, L.S. ; Yeo, Y.-C. 
92Nov-2007Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependenceAng, K.-W.; Wan, C.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
93Dec-2006I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineeringToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
94Feb-2011III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped FinChin, H.-C.; Gong, X.; Wang, L.; Lee, H.K.; Shi, L.; Yeo, Y.-C. 
95Dec-2011Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implantTong, Y.; Zhou, Q. ; Chua, L.H.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C. 
9629-Aug-2011Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistorsLiu, X.; Kim Fong Low, E.; Pan, J.; Liu, W.; Leong Teo, K. ; Tan, L.-S. ; Yeo, Y.-C. 
972007Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G. ; Kwong, D.-L. ; Yeo, Y.-C. 
98Apr-2005Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first processKang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
99Feb-2012In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage SuppressionZhu, Z.; Gong, X.; Ivana; Yeo, Y.-C. 
1002007In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applicationsZhu, M. ; Chin, H.-C.; Tung, C.-H.; Yeo, Y.-C.