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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Results 81-100 of 141 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
81Apr-2003Localized oxide degradation in ultrathin gate dielectric and its statistical analysisLoh, W.Y. ; Cho, B.J. ; Li, M.F. ; Chan, D.S.H. ; Ang, C.H.; Zheng, J.Z.; Kwong, D.L.
822007Low energy N2 ion bombardment for removal of (Hf O2) x (SiON)1-x in dilute HFHwang, W.S.; Cho, B.-J. ; Chan, D.S.H. ; Yoo, W.J.
83Oct-1998Low-frequency noise characterizattion of latent damage in thin oxides subjected to high-field impulse stressingChim, W.K. ; Yeo, B.P.; Lim, P.S.; Chan, D.S.H. 
4Sep-2005Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting trapsSa, N.; Kang, J.F.; Yang, H.; Liu, X.Y.; He, Y.D.; Han, R.Q.; Ren, C.; Yu, H.Y.; Chan, D.S.H. ; Kwong, D.-L.
5Mar-2006Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complexSong, Y.; Ling, Q.D. ; Zhu, C. ; Kang, E.T. ; Chan, D.S.H. ; Wang, Y.H.; Kwong, D.L.
62008Metal carbides for band-edge work function metal gate CMOS devicesHwang, W.S.; Chan, D.S.H. ; Cho, B.J.
7Oct-2004Microtomography and improved resolution in cathodoluminescence microscopy using confocal mirror opticsChan, D.S.H. ; Liu, Y.Y.; Phang, J.C.H. ; Rau, E.; Sennov, R.; Gostev, A.V.
8Dec-1992Modelling techniques for the quantification of some electron beam induced phenomenaChim, W.K. ; Chan, D.S.H. ; Low, T.S. ; Phang, J.C.H. ; Sim, K.S. ; Pey, K.L. ; Dinnis, A.R.; Holt, D.B.; Nakamae, K.; Schottler, M.
9May-1998Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressingQin, W.H.; Chim, W.K. ; Chan, D.S.H. ; Lou, C.L.
10Apr-2008Multi-layer high-κ interpoly dielectric for floating gate flash memory devicesZhang, L.; He, W. ; Chan, D.S.H. ; Cho, B.J. 
11Feb-1996New developments in beam induced current methods for the failure analysis of VLSI circuitsChan, D.S.H. ; Phang, J.C.H. ; Lau, W.S. ; Ong, V.K.S. ; Sane, V. ; Kolachina, S.; Osipowicz, T. ; Watt, F. 
122009Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistorsJiang, Y.; Liow, T.Y.; Singh, N.; Tan, L.H.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
1323-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
14Jun-2006Non-volatile WORM memory device based on an acrylate polymer with electron donating carbazole pendant groupsTeo, E.Y.H. ; Ling, Q.D. ; Song, Y.; Tan, Y.P.; Wang, W.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
15Nov-2004Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performanceChen, J.H. ; Wang, Y.Q.; Yoo, W.J. ; Yeo, Y.-C. ; Samudra, G. ; Chan, D.S.H. ; Du, A.Y.; Kwong, D.-L.
162-Jan-2007Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60Ling, Q.-D. ; Lim, S.-L.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
172009Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channelJiang, Y.; Singh, N.; Liow, T.Y.; Lim, P.C.; Tripathy, S.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.-L.
18Jul-1994Optoelectronic material analysis and device failure analysis using SEM cathodoluminescencePey, K.L. ; Chim, W.K. ; Phang, J.C.H. ; Chan, D.S.H. 
19Feb-2010Origin of different dependences of open-circuit voltage on the electrodes in layered and bulk heterojunction organic photovoltaic cellsZhang, C. ; Tong, S.-W. ; Jiang, C.-Y.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
202009Performance improvement in charge-trap flash memory using lanthanum-based high-κ blocking oxideHe, W. ; Pu, J. ; Chan, D.S.H. ; Cho, B.J.