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|Title:||New developments in beam induced current methods for the failure analysis of VLSI circuits||Authors:||Chan, D.S.H.
|Issue Date:||Feb-1996||Citation:||Chan, D.S.H.,Phang, J.C.H.,Lau, W.S.,Ong, V.K.S.,Sane, V.,Kolachina, S.,Osipowicz, T.,Watt, F. (1996-02). New developments in beam induced current methods for the failure analysis of VLSI circuits. Microelectronic Engineering 31 (1-4) : 57-67. ScholarBank@NUS Repository.||Abstract:||Several new developments using beam induced current methods for the failure analysis of VLSI circuits will be reviewed in this paper. These include the development of a single contact electron beam induced current method (SCEBIC) which facilitates the collection of EBIC signals from VLSI circuits using only a single contact to the substrate, a complementary technique using a proton beam to access the active regions through multi-level metal layers and Tunneling Current Microscopy (TCM) to distinguish oxide, substrate and oxide/substrate defects in very thin silicon dioxide films.||Source Title:||Microelectronic Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/62473||ISSN:||01679317|
|Appears in Collections:||Staff Publications|
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