Metal carbides for band-edge work function metal gate CMOS devices

Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2008.927946

Title:	Metal carbides for band-edge work function metal gate CMOS devices
Authors:	Hwang, W.S. Chan, D.S.H. Cho, B.J.
Keywords:	CMOS devices Equivalent oxide thickness (EOT) Flatband voltage HfC high-κ dielectric Metal carbide Metal gate MOS capacitor TaC Work function (WF)
Issue Date:	2008
Citation:	Hwang, W.S., Chan, D.S.H., Cho, B.J. (2008). Metal carbides for band-edge work function metal gate CMOS devices. IEEE Transactions on Electron Devices 55 (9) : 2469-2474. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.927946
Abstract:	Various metal carbides (TaC, HfC, WC, and VC) were thoroughly investigated for metal gate CMOS devices with band-edge work functions (WFs). It is found that TaC and HfC are more suitable for the CMOS device application among the various metal carbides. HfC is demonstrated to be a good candidate for NMOS because of its low WF and excellent thermal stability, while TaC + Al shows a high WF and good thermal stability suitable for PMOS device application. In addition, HfC and TaC have a wide range of WF tunability using thin LaN and AlN interlayer or introduction of La and Al into the metal carbides. © 2008 IEEE.
Source Title:	IEEE Transactions on Electron Devices
URI:	http://scholarbank.nus.edu.sg/handle/10635/56606
ISSN:	00189383
DOI:	10.1109/TED.2008.927946
Appears in Collections:	Staff Publications

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