Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2008.927946
Title: Metal carbides for band-edge work function metal gate CMOS devices
Authors: Hwang, W.S.
Chan, D.S.H. 
Cho, B.J.
Keywords: CMOS devices
Equivalent oxide thickness (EOT)
Flatband voltage
HfC
high-κ dielectric
Metal carbide
Metal gate
MOS capacitor
TaC
Work function (WF)
Issue Date: 2008
Source: Hwang, W.S., Chan, D.S.H., Cho, B.J. (2008). Metal carbides for band-edge work function metal gate CMOS devices. IEEE Transactions on Electron Devices 55 (9) : 2469-2474. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.927946
Abstract: Various metal carbides (TaC, HfC, WC, and VC) were thoroughly investigated for metal gate CMOS devices with band-edge work functions (WFs). It is found that TaC and HfC are more suitable for the CMOS device application among the various metal carbides. HfC is demonstrated to be a good candidate for NMOS because of its low WF and excellent thermal stability, while TaC + Al shows a high WF and good thermal stability suitable for PMOS device application. In addition, HfC and TaC have a wide range of WF tunability using thin LaN and AlN interlayer or introduction of La and Al into the metal carbides. © 2008 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/56606
ISSN: 00189383
DOI: 10.1109/TED.2008.927946
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