Please use this identifier to cite or link to this item:
|Title:||Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressing||Authors:||Qin, W.H.
|Issue Date:||May-1998||Citation:||Qin, W.H., Chim, W.K., Chan, D.S.H., Lou, C.L. (1998-05). Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressing. Semiconductor Science and Technology 13 (5) : 453-459. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/13/5/003||Abstract:||Hot-carrier injection is observed increasingly to degrade the subthreshold characteristics with the scaling of LDD PMOSFETs. A physical subthreshold current model is applied to the fresh and hot-carrier-stressed submicrometre channel length devices. The channel length reduction is subsequently extracted. An empirical relationship is developed to characterize the degradation parameters as a function of stress time and channel length. With the use of this relationship, we can determine the device lifetime or predict the minimum allowable channel length (for a certain percentage of degradation and lifetime) that is applicable for a specific technology. The degradation of the PMOSFET subthreshold current, which imposes a major limit on device reliability for deep-submicron technology and low-power applications, is fully described by a physical analytical model.||Source Title:||Semiconductor Science and Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/62433||ISSN:||02681242||DOI:||10.1088/0268-1242/13/5/003|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 20, 2022
WEB OF SCIENCETM
checked on Sep 27, 2021
checked on Jan 27, 2022
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.