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|Title:||Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complex||Authors:||Song, Y.
|Issue Date:||Mar-2006||Citation:||Song, Y., Ling, Q.D., Zhu, C., Kang, E.T., Chan, D.S.H., Wang, Y.H., Kwong, D.L. (2006-03). Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complex. IEEE Electron Device Letters 27 (3) : 154-156. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.864172||Abstract:||A memory device based on the sandwiched structure of a conjugated copolymer (PF8Eu), containing fluorene and chelated Europium complex, has been fabricated. An electrical bistability phenomenon was observed on this device: low conductivity state for the as-fabricated device and high conductivity state after device transition by applying a voltage of ∼3 V. At the low conductivity state, the device showed a charge injection controlled current and at the high conductivity state, the device showed a space charge limited current. At the same applied voltage, the device exhibited two distinguishable conductivities with an ON/OFF current ratio as high as 10 6 at room temperature. After transition to the high conductivity state, the device tended to remain in the high conductivity state even when the applied voltage was removed. Thus, the device is a potential write-once-read-many-times memory device. © 2006 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82678||ISSN:||07413106||DOI:||10.1109/LED.2005.864172|
|Appears in Collections:||Staff Publications|
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