Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.864172
DC FieldValue
dc.titleMemory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complex
dc.contributor.authorSong, Y.
dc.contributor.authorLing, Q.D.
dc.contributor.authorZhu, C.
dc.contributor.authorKang, E.T.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorWang, Y.H.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2014-10-07T04:32:13Z
dc.date.available2014-10-07T04:32:13Z
dc.date.issued2006-03
dc.identifier.citationSong, Y., Ling, Q.D., Zhu, C., Kang, E.T., Chan, D.S.H., Wang, Y.H., Kwong, D.L. (2006-03). Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complex. IEEE Electron Device Letters 27 (3) : 154-156. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.864172
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82678
dc.description.abstractA memory device based on the sandwiched structure of a conjugated copolymer (PF8Eu), containing fluorene and chelated Europium complex, has been fabricated. An electrical bistability phenomenon was observed on this device: low conductivity state for the as-fabricated device and high conductivity state after device transition by applying a voltage of ∼3 V. At the low conductivity state, the device showed a charge injection controlled current and at the high conductivity state, the device showed a space charge limited current. At the same applied voltage, the device exhibited two distinguishable conductivities with an ON/OFF current ratio as high as 10 6 at room temperature. After transition to the high conductivity state, the device tended to remain in the high conductivity state even when the applied voltage was removed. Thus, the device is a potential write-once-read-many-times memory device. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.864172
dc.sourceScopus
dc.subjectElectrical bistability
dc.subjectMemory effect
dc.subjectPolymer
dc.subjectThin-film device
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.864172
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume27
dc.description.issue3
dc.description.page154-156
dc.description.codenEDLED
dc.identifier.isiut000235846700005
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

47
checked on May 10, 2022

WEB OF SCIENCETM
Citations

44
checked on May 10, 2022

Page view(s)

125
checked on May 12, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.