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Cho Byung-Jin

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Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
Main Affiliation
 
Faculty
 
Email
elebjcho@nus.edu.sg
 

Publications

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Department:  ELECTRICAL & COMPUTER ENGINEERING
Author:  Li, M.-F.

Results 1-20 of 39 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12004A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectricsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.
2Sep-2002A high performance MIM capacitor using HfO 2 dielectricsHu, H.; Zhu, C. ; Lu, Y.F. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. 
3Feb-2003A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectricsYu, X.; Zhu, C. ; Hu, H.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.
4Mar-2004Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual GatesYu, D.S.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
52003Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier SeparationLoh, W.Y. ; Cho, B.C. ; Joo, M.S. ; Li, M.F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
6Mar-2006Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applicationsZhu, C. ; Cho, B.-J. ; Li, M.-F. 
72001Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxidesLoh, W.Y. ; Cho, B.J. ; Li, M.F. 
8Dec-2004Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separationLoh, W.-Y. ; Cho, B.J. ; Joo, M.S. ; Li, M.-F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
98-Jul-2002Correlation between interface traps and gate oxide leakage current in the direct tunneling regimeLoh, W.Y. ; Cho, B.J. ; Li, M.F. 
101-Mar-2003Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectricJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Wu, N.; Yu, H. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.; Balasubramanian, N.
1110-May-2004Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrateWu, N.; Zhang, Q.; Zhu, C. ; Yeo, C.C.; Whang, S.J. ; Chan, D.S.H. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.; Du, A.Y.; Tung, C.H.; Balasubramanian, N.
128-Jul-2002Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) SiYu, H.Y. ; Li, M.F. ; Cho, B.J. ; Yeo, C.C.; Joo, M.S. ; Kwong, D.-L.; Pan, J.S.; Ang, C.H.; Zheng, J.Z.; Ramanathan, S.
132004Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Yu, M.B.; Zhu, C. ; Chin, A.; Kwong, D.-L.
14Oct-2004Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterpartsDing, S.-J. ; Hu, H.; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Du, A.Y.; Chin, A.; Kwong, D.-L.
1515-Apr-2002Evolution of quasi-breakdown in thin gate oxidesLoh, W.Y. ; Cho, B.J. ; Li, M.F. 
16May-2001Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxideGuan, H.; Cho, B.J. ; Li, M.F. ; Xu, Z.; He, Y.D. ; Dong, Z.
172003Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETsHuang, C.H.; Yu, D.S.; Chin, A.; Wu, C.H.; Chen, W.J.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
182003HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC ApplicationsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A. ; Kwong, D.-L. 
192005High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applicationsKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
202003High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC ApplicationsHu, H.; Ding, S.-J. ; Lim, H.F. ; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Yu, X.F.; Chen, J.H. ; Yong, Y.F.; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Tung, C.H.; Du, A.; My, D.; Foo, P.D.; Chin, A.; Kwong, D.-L.