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Chunxiang Zhu

rp01634

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Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Refined By:
Author:  Chin, A.
Date Issued:  2004

Results 1-20 of 28 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
120043D GOI CMOSFETs with novel IrO 2(Hf) dual gates and high-κ dielectric on 1P6M-0.18μm-CMOSYu, D.S.; Chin, A. ; Laio, C.C.; Lee, C.F.; Cheng, C.F.; Chen, W.J.; Zhu, C. ; Li, M.-F. ; Yoo, W.J. ; McAlister, S.P.; Kwong, D.L.
22004A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectricsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.
32004A novel program-erasable capacitor using high-κ AlN dielectricLai, C.H.; Ma, M.W.; Cheng, C.F.; Chin, A.; McAlister, S.P.; Zhu, C.X. ; Li, M.-F. ; Kwong, D.L.
42004A novel program-erasable high-κ AlN capacitor with memory functionChin, A. ; Lai, C.H.; Hung, B.F.; Cheng, C.F.; McAlister, S.P.; Zhu, C. ; Li, M.-F. ; Kwong, D.-L.
52004A novel surface passivation process for HfO 2 Ge MOSFETsWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
6Sep-2004A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivationWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Du, A.; Balasubramanian, N.; Li, M.F. ; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
72004A tunable and program-erasable capacitor on Si with excellent tuning memoryLai, C.H.; Lee, C.F.; Chin, A.; Zhu, C. ; Li, M.F. ; McAlister, S.P.; Kwong, D.L.
8Mar-2004Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual GatesYu, D.S.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
91-Nov-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Chin, A.; Kwong, D.-L.
1010-May-2004Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrateWu, N.; Zhang, Q.; Zhu, C. ; Yeo, C.C.; Whang, S.J. ; Chan, D.S.H. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.; Du, A.Y.; Tung, C.H.; Balasubramanian, N.
114-Oct-2004Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gateYu, X.; Zhu, C. ; Li, M.F. ; Chin, A.; Du, A.Y.; Wang, W.D.; Kwong, D.-L.
1220-Sep-2004Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistorsLow, T.; Li, M.F. ; Shen, C.; Yeo, Y.-C. ; Hou, Y.T. ; Zhu, C. ; Chin, A.; Kwong, D.L.
132004Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Yu, M.B.; Zhu, C. ; Chin, A.; Kwong, D.-L.
14Oct-2004Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterpartsDing, S.-J. ; Hu, H.; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Du, A.Y.; Chin, A.; Kwong, D.-L.
15Aug-2004Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobilityYu, D.S.; Chiang, K.C.; Cheng, C.F.; Chin, A.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
162004High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectricYu, X.; Zhu, C. ; Wang, X.P.; Li, M.F. ; Chin, A.; Du, A.Y.; Wang, W.D.; Kwong, D.-L.
172004High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technologyChin, A.; Kao, H.L.; Yu, D.S.; Liao, C.C.; Zhu, C. ; Li, M.-F. ; Zhu, S. ; Kwong, D.-L.
182004Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETsLow, T.; Li, M.F. ; Fan, W.J.; Ng, S.T.; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Chan, L.; Kwong, D.L.
19Aug-2004Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectricKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Zhu, C. ; Yu, M.B.; Narayanan, B.; Chin, A.; Kwong, D.-L.
20Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.