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|Title:||A tunable and program-erasable capacitor on Si with excellent tuning memory||Authors:||Lai, C.H.
|Issue Date:||2004||Citation:||Lai, C.H.,Lee, C.F.,Chin, A.,Zhu, C.,Li, M.F.,McAlister, S.P.,Kwong, D.L. (2004). A tunable and program-erasable capacitor on Si with excellent tuning memory. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers : 259-262. ScholarBank@NUS Repository.||Abstract:||A novel tunable and program-erasable high-κ AIN MIS capacitor is demonstrated for the first time with excellent tuning memory, which is useful to tune the impedance mismatching and resonance frequency without always connected voltage bias circuit. Large C max/C min tunability of 12 is obtained due to the high-κ AIN dielectric with high 5 πF/πm 2 capacitance density. Good tuning memory is evidenced from the small V th variation after program or erase at +4 V or -4 V for 10,000 s and the potential of years long extrapolated memory time.||Source Title:||IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/83430|
|Appears in Collections:||Staff Publications|
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