Please use this identifier to cite or link to this item:
|Title:||Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors||Authors:||Low, T.
|Issue Date:||20-Sep-2004||Citation:||Low, T., Li, M.F., Shen, C., Yeo, Y.-C., Hou, Y.T., Zhu, C., Chin, A., Kwong, D.L. (2004-09-20). Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors. Applied Physics Letters 85 (12) : 2402-2404. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1788888||Abstract:||The electron mobility of ultrathin-body (UTB) metal-oxide semiconductor field-effect transistors (MOSFETs) with sub-10-nm-body thickness, T body, employing strained-Si and Ge was investigated. It was observed that for biaxial tensile strained-Si UTB MOSFETs, strain effects offered mobility enhancement down to a body thickness of 3 nm. In the case of Ge channel UTB MOSFETs, electron mobility was depended on surface orientation. The results show Ge〈100〉 and Ge〈110〉 suffer degradation in mobility due to low quantization masses at small T bidy.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82262||ISSN:||00036951||DOI:||10.1063/1.1788888|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 4, 2021
WEB OF SCIENCETM
checked on Feb 24, 2021
checked on Mar 1, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.