Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1788888
Title: Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
Authors: Low, T.
Li, M.F. 
Shen, C.
Yeo, Y.-C. 
Hou, Y.T. 
Zhu, C. 
Chin, A.
Kwong, D.L.
Issue Date: 20-Sep-2004
Citation: Low, T., Li, M.F., Shen, C., Yeo, Y.-C., Hou, Y.T., Zhu, C., Chin, A., Kwong, D.L. (2004-09-20). Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors. Applied Physics Letters 85 (12) : 2402-2404. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1788888
Abstract: The electron mobility of ultrathin-body (UTB) metal-oxide semiconductor field-effect transistors (MOSFETs) with sub-10-nm-body thickness, T body, employing strained-Si and Ge was investigated. It was observed that for biaxial tensile strained-Si UTB MOSFETs, strain effects offered mobility enhancement down to a body thickness of 3 nm. In the case of Ge channel UTB MOSFETs, electron mobility was depended on surface orientation. The results show Ge〈100〉 and Ge〈110〉 suffer degradation in mobility due to low quantization masses at small T bidy.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82262
ISSN: 00036951
DOI: 10.1063/1.1788888
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