Please use this identifier to cite or link to this item:
|Title:||Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectric||Authors:||Kim, S.J.
|Issue Date:||Aug-2004||Citation:||Kim, S.J., Cho, B.J., Li, M.-F., Ding, S.-J., Zhu, C., Yu, M.B., Narayanan, B., Chin, A., Kwong, D.-L. (2004-08). Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectric. IEEE Electron Device Letters 25 (8) : 538-540. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.832785||Abstract:||It is demonstrated that the voltage coefficients of capacitance (VCC) in high-κ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-κ and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fFμm2 and quadratic VCC of only 14 ppm/V2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm °C) as well as low leakage current of less than 10 nA/cm2 up to 4 V at 125 °C. © 2004 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82510||ISSN:||07413106||DOI:||10.1109/LED.2004.832785|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 3, 2019
WEB OF SCIENCETM
checked on Nov 26, 2019
checked on Nov 30, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.