Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.832785
Title: Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectric
Authors: Kim, S.J. 
Cho, B.J. 
Li, M.-F. 
Ding, S.-J. 
Zhu, C. 
Yu, M.B.
Narayanan, B.
Chin, A.
Kwong, D.-L.
Issue Date: Aug-2004
Citation: Kim, S.J., Cho, B.J., Li, M.-F., Ding, S.-J., Zhu, C., Yu, M.B., Narayanan, B., Chin, A., Kwong, D.-L. (2004-08). Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectric. IEEE Electron Device Letters 25 (8) : 538-540. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.832785
Abstract: It is demonstrated that the voltage coefficients of capacitance (VCC) in high-κ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-κ and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fFμm2 and quadratic VCC of only 14 ppm/V2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm °C) as well as low leakage current of less than 10 nA/cm2 up to 4 V at 125 °C. © 2004 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82510
ISSN: 07413106
DOI: 10.1109/LED.2004.832785
Appears in Collections:Staff Publications

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