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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2021]
Author:  Kwong, D.-L.
Type:  Article

Results 1-20 of 35 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
1Aug-2004A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gateRen, C.; Yu, H.Y. ; Kang, J.F.; Wang, X.P.; Ma, H.H.H. ; Yeo, Y.-C. ; Chan, D.S.H. ; Li, M.-F. ; Kwong, D.-L.
228-Apr-2006A dynamic random access memory based on a conjugated copolymer containing electron-donor and -acceptor moietiesLing, Q.-D. ; Song, Y.; Lim, S.-L.; Teo, E.Y.-H. ; Tan, Y.-P.; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
3Sep-2004A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivationWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Du, A.; Balasubramanian, N.; Li, M.F. ; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
41-Nov-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Chin, A.; Kwong, D.-L.
5Dec-2004Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separationLoh, W.-Y. ; Cho, B.J. ; Joo, M.S. ; Li, M.-F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
6Nov-2007CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
710-May-2004Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrateWu, N.; Zhang, Q.; Zhu, C. ; Yeo, C.C.; Whang, S.J. ; Chan, D.S.H. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.; Du, A.Y.; Tung, C.H.; Balasubramanian, N.
82004Effects of Annealing and Ar Ion Bombardment on the Removal of HfO 2 Gate DielectricChen, J. ; Yoo, W.J. ; Chan, D.S.H. ; Kwong, D.-L.
9Oct-2004Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterpartsDing, S.-J. ; Hu, H.; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Du, A.Y.; Chin, A.; Kwong, D.-L.
10Mar-2004Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate StackRen, C.; Yu, H.Y. ; Kang, J.F. ; Hou, Y.T. ; Li, M.-F. ; Wang, W.D.; Chan, D.S.H. ; Kwong, D.-L.
11Jul-2007Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum wellJiang, Y.; Loh, W.Y.; Chan, D.S.H. ; Xiong, Y.Z.; Ren, C.; Lim, Y.F.; Lo, G.Q.; Kwong, D.-L.
12Oct-2003Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD processJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Chan, D.S.H. ; Whoang, S.J.; Mathew, S.; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
1324-May-2004Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applicationsGupta, R.; Yoo, W.J. ; Wang, Y.; Tan, Z.; Samudra, G. ; Lee, S. ; Chan, D.S.H. ; Loh, K.P. ; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
14Dec-2003High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate DielectricsDing, S.-J. ; Hu, H.; Lim, H.F. ; Kim, S.J. ; Yu, X.F.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Chin, A.; Kwong, D.-L.
15Apr-2005Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first processKang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
16Sep-2005Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting trapsSa, N.; Kang, J.F.; Yang, H.; Liu, X.Y.; He, Y.D.; Han, R.Q.; Ren, C.; Yu, H.Y.; Chan, D.S.H. ; Kwong, D.-L.
1723-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
1823-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
19Nov-2004Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performanceChen, J.H. ; Wang, Y.Q.; Yoo, W.J. ; Yeo, Y.-C. ; Samudra, G. ; Chan, D.S.H. ; Du, A.Y.; Kwong, D.-L.
202009Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channelJiang, Y.; Singh, N.; Liow, T.Y.; Lim, P.C.; Tripathy, S.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.-L.