Effects of Annealing and Ar Ion Bombardment on the Removal of HfO 2 Gate Dielectric

Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1642577

Title:	Effects of Annealing and Ar Ion Bombardment on the Removal of HfO 2 Gate Dielectric
Authors:	Chen, J. Yoo, W.J. Chan, D.S.H. Kwong, D.-L.
Issue Date:	2004
Citation:	Chen, J., Yoo, W.J., Chan, D.S.H., Kwong, D.-L. (2004). Effects of Annealing and Ar Ion Bombardment on the Removal of HfO 2 Gate Dielectric. Electrochemical and Solid-State Letters 7 (3) : F18-F20. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1642577
Abstract:	A process was investigated to remove HfO 2 gate dielectric film that had been deposited and annealed under various conditions. The etch rate of HfO 2 annealed at 950°C was 0.14 Å/min in 10% HF, but increased up to 90 Å/min after Ar ion bombardment. The crystalline structure of the annealed HfO 2 films collapsed upon bombardment by Ar ions. The amorphization and rarefaction of HfO 2 by Ar ion bombardment were responsible for the dramatic increase of the etch rates. Almost no consumption of the underlying Si substrate was observed after the removal of the HfO 2 dielectric films. © 2004 The Electrochemical Society. All rights reserved.
Source Title:	Electrochemical and Solid-State Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82219
ISSN:	10990062
DOI:	10.1149/1.1642577
Appears in Collections:	Staff Publications

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