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|Title:||Effects of Annealing and Ar Ion Bombardment on the Removal of HfO 2 Gate Dielectric||Authors:||Chen, J.
|Issue Date:||2004||Citation:||Chen, J., Yoo, W.J., Chan, D.S.H., Kwong, D.-L. (2004). Effects of Annealing and Ar Ion Bombardment on the Removal of HfO 2 Gate Dielectric. Electrochemical and Solid-State Letters 7 (3) : F18-F20. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1642577||Abstract:||A process was investigated to remove HfO 2 gate dielectric film that had been deposited and annealed under various conditions. The etch rate of HfO 2 annealed at 950°C was 0.14 Å/min in 10% HF, but increased up to 90 Å/min after Ar ion bombardment. The crystalline structure of the annealed HfO 2 films collapsed upon bombardment by Ar ions. The amorphization and rarefaction of HfO 2 by Ar ion bombardment were responsible for the dramatic increase of the etch rates. Almost no consumption of the underlying Si substrate was observed after the removal of the HfO 2 dielectric films. © 2004 The Electrochemical Society. All rights reserved.||Source Title:||Electrochemical and Solid-State Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82219||ISSN:||10990062||DOI:||10.1149/1.1642577|
|Appears in Collections:||Staff Publications|
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