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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

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Type:  Article

Results 101-120 of 241 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
101Feb-2011III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped FinChin, H.-C.; Gong, X.; Wang, L.; Lee, H.K.; Shi, L.; Yeo, Y.-C. 
102Dec-2011Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implantTong, Y.; Zhou, Q. ; Chua, L.H.; Thanigaivelan, T.; Henry, T.; Yeo, Y.-C. 
10329-Aug-2011Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistorsLiu, X.; Kim Fong Low, E.; Pan, J.; Liu, W.; Leong Teo, K. ; Tan, L.-S. ; Yeo, Y.-C. 
1042007Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G. ; Kwong, D.-L. ; Yeo, Y.-C. 
105Apr-2005Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first processKang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
106Feb-2012In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage SuppressionZhu, Z.; Gong, X.; Ivana; Yeo, Y.-C. 
1072007In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applicationsZhu, M. ; Chin, H.-C.; Tung, C.-H.; Yeo, Y.-C. 
108Jun-2008In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETsChin, H.-C.; Zhu, M. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C. 
109Jan-2011In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectricLiu, X.; Chin, H.-C.; Tan, L.-S. ; Yeo, Y.-C. 
1102013In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectricZhang, X.; Guo, H.X.; Zhu, Z.; Gong, X.; Yeo, Y.-C. 
1112011In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drainZhang, X.; Guo, H.; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Lin, H.-Y.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
1122007Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processingLiu, F.; Tan, K.-M.; Wang, X.; Low, D.K.Y.; Lai, D.M.Y.; Lim, P.C.; Samudra, G. ; Yeo, Y.-C. 
1132001Incremental self-growing neural networks with the changing environmentSu, L.; Guan, S.U. ; Yeo, Y.C. 
1142015Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materialsJohll, H.; Samuel, M.; Koo, R.Y.; Kang, H.C. ; Yeo, Y.-C. ; Tok E.S. 
1153-Dec-2007Injection-induced de-doping in a conducting polymer during device operation: Asymmetry in the hole injection and extraction ratesChia, P.-J. ; Chua, L.-L. ; Sivaramakrishnan, S. ; Zhuo, J.-M. ; Zhao, L.-H.; Sim, W.-S. ; Yeo, Y.-C. ; Ho, P.K.-H. 
1162013Integration of TaOx-based resistive-switching element and GaAs diodeXu Z.; Tong X. ; Yoon S.F. ; Yeo Y.C. ; Chia C.K.; Dalapati G.K.; Chi D.Z.
117Oct-2005Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Kwong, D.-L.
1182013Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistorsKong, E.Y.-J.; Ivana; Zhang, X.; Zhou, Q. ; Pan, J.; Zhang, Z.; Yeo, Y.-C. 
1192005Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structuresLiow, T.-Y.; Tan, K.-M.; Yeo, Y.-C. ; Agarwal, A.; Du, A.; Tung, C.-H.; Balasubramanian, N.
12014-Mar-2013Junctionless II-gate transistor with indium gallium arsenide channelGuo, H.X.; Zhang, X.; Zhu, Z.; Kong, E.Y.J.; Yeo, Y.-C.