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Cho Byung-Jin

rp04188

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Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
Main Affiliation
 
Faculty
 
Email
elebjcho@nus.edu.sg
 

Publications

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Author:  Cho, B.J.

Results 21-40 of 151 (Search time: 0.01 seconds).

Issue DateTitleAuthor(s)
21Aug-2007Border-trap characterization in high-κ strained-Si MOSFETsMaji, D.; Duttagupta, S.P.; Rao, V.R.; Yeo, C.C.; Cho, B.-J. 
222004Boron profile narrowing in laser-processed silicon after rapid thermal annealPoon, C.H.; Tan, L.S. ; Cho, B.J. ; See, A.; Bhat, M.
23Jul-2008Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memoryPu, J. ; Kim, S.-J.; Lee, S.-H.; Kim, Y.-S.; Kim, S.-T.; Choi, K.-J.; Cho, B.J. 
24Sep-2004Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETsMathew, S.; Bera, L.K.; Balasubramanian, N.; Joo, M.S. ; Cho, B.J. 
251999Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structuresYue, J.M.P.; Chim, W.K. ; Cho, B.J. ; Chan, D.S.H. ; Qin, W.H.; Kim, Y.B.; Jang, S.A.; Yeo, I.S.
26Dec-2004Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separationLoh, W.-Y. ; Cho, B.J. ; Joo, M.S. ; Li, M.-F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
27Oct-2000Comparative study of radiation- and stress-induced leakage currents in thin gate oxidesAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
281-Jul-2000Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradationCho, B.J. ; Kim, S.J. ; Ling, C.H. ; Joo, M.-S.; Yeo, I.-S.
292007Complementary metal-oxide-semiconductor compatible Al-catalyzed silicon nanowiresWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Cho, B.J. ; Liew, Y.F. ; Kwong, D.L. 
3018-Oct-1999Conduction mechanism under quasibreakdown of ultrathin gate oxideHe, Y.D. ; Guan, H.; Li, M.F. ; Cho, B.J. ; Dong, Z.
318-Jul-2002Correlation between interface traps and gate oxide leakage current in the direct tunneling regimeLoh, W.Y. ; Cho, B.J. ; Li, M.F. 
3230-Dec-2006Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor depositionChen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Tang, L.J.; Lu, D.; Dong, J.R.
33Feb-2008Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrierZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Chua, K.T.; Yu, M.B.; Cho, B.J. ; Lo, G.Q.; Kwong, D.-L.
34Jan-2008Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacksMajhi, P.; Kalra, P.; Harris, R.; Choi, K.J.; Heh, D.; Oh, J.; Kelly, D.; Choi, R.; Cho, B.J. ; Banerjee, S.; Tsai, W.; Tseng, H.; Jammy, R.
351-Mar-2003Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectricJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Wu, N.; Yu, H. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.; Balasubramanian, N.
361999Design of lateral IGBT protection circuit for smart power integrationLuo, Junyang; Liang, Yung C. ; Cho, Byung-Jin 
37Aug-2000Design of LIGBT protection circuit for smart power integrationLuo, J.; Liang, Y.C. ; Cho, B.J. 
382000Does short wavelength lithography process degrade the integrity of thin gate oxide?Kim, S.J. ; Cho, B.J. ; Chong, P.F.; Chor, E.F. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
392005Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealingPoon, C.H.; Tan, L.S. ; Cho, B.J. ; Du, A.Y.
402007Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channelZang, H.; Chua, C.K.; Loh, W.Y.; Cho, B.J.