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|Title:||Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation||Authors:||Cho, B.J.
|Issue Date:||1-Jul-2000||Citation:||Cho, B.J., Kim, S.J., Ling, C.H., Joo, M.-S., Yeo, I.-S. (2000-07-01). Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation. Solid-State Electronics 44 (7) : 1289-1292. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(00)00037-X||Abstract:||Thin gate oxides, irradiated under conditions similar to those experienced in X-ray lithography, exhibit a large increase in the leakage current. The current-voltage characteristics of the radiation-induced leakage current (RILC) and the electrical stress-induced leakage current (SILC) are very similar. Both currents comprise a dc component due to trap-assisted tunneling, and a transient component attributed to the tunnel charging/discharging of careers. Current-voltage and current-time data suggest essentially the same degradation mechanisms for both the RILC and SILC in ultra-thin oxides. A quadratic relationship between the X-ray dose and the equivalent charge fluence that induces the same amount of degradation is established.||Source Title:||Solid-State Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/61950||ISSN:||00381101||DOI:||10.1016/S0038-1101(00)00037-X|
|Appears in Collections:||Staff Publications|
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