Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1101(00)00037-X
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dc.titleComparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation
dc.contributor.authorCho, B.J.
dc.contributor.authorKim, S.J.
dc.contributor.authorLing, C.H.
dc.contributor.authorJoo, M.-S.
dc.contributor.authorYeo, I.-S.
dc.date.accessioned2014-06-17T06:45:47Z
dc.date.available2014-06-17T06:45:47Z
dc.date.issued2000-07-01
dc.identifier.citationCho, B.J., Kim, S.J., Ling, C.H., Joo, M.-S., Yeo, I.-S. (2000-07-01). Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation. Solid-State Electronics 44 (7) : 1289-1292. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(00)00037-X
dc.identifier.issn00381101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/61950
dc.description.abstractThin gate oxides, irradiated under conditions similar to those experienced in X-ray lithography, exhibit a large increase in the leakage current. The current-voltage characteristics of the radiation-induced leakage current (RILC) and the electrical stress-induced leakage current (SILC) are very similar. Both currents comprise a dc component due to trap-assisted tunneling, and a transient component attributed to the tunnel charging/discharging of careers. Current-voltage and current-time data suggest essentially the same degradation mechanisms for both the RILC and SILC in ultra-thin oxides. A quadratic relationship between the X-ray dose and the equivalent charge fluence that induces the same amount of degradation is established.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0038-1101(00)00037-X
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1016/S0038-1101(00)00037-X
dc.description.sourcetitleSolid-State Electronics
dc.description.volume44
dc.description.issue7
dc.description.page1289-1292
dc.description.codenSSELA
dc.identifier.isiut000087297100026
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