Please use this identifier to cite or link to this item:
|Title:||Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation|
|Authors:||Cho, B.J. |
|Source:||Cho, B.J.,Kim, S.J.,Ling, C.H.,Joo, M.-S.,Yeo, I.-S. (2000-07-01). Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation. Solid-State Electronics 44 (7) : 1289-1292. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(00)00037-X|
|Abstract:||Thin gate oxides, irradiated under conditions similar to those experienced in X-ray lithography, exhibit a large increase in the leakage current. The current-voltage characteristics of the radiation-induced leakage current (RILC) and the electrical stress-induced leakage current (SILC) are very similar. Both currents comprise a dc component due to trap-assisted tunneling, and a transient component attributed to the tunnel charging/discharging of careers. Current-voltage and current-time data suggest essentially the same degradation mechanisms for both the RILC and SILC in ultra-thin oxides. A quadratic relationship between the X-ray dose and the equivalent charge fluence that induces the same amount of degradation is established.|
|Source Title:||Solid-State Electronics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 13, 2017
checked on Dec 15, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.