Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1101(00)00037-X
Title: Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation
Authors: Cho, B.J. 
Kim, S.J. 
Ling, C.H. 
Joo, M.-S.
Yeo, I.-S.
Issue Date: 1-Jul-2000
Source: Cho, B.J.,Kim, S.J.,Ling, C.H.,Joo, M.-S.,Yeo, I.-S. (2000-07-01). Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation. Solid-State Electronics 44 (7) : 1289-1292. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(00)00037-X
Abstract: Thin gate oxides, irradiated under conditions similar to those experienced in X-ray lithography, exhibit a large increase in the leakage current. The current-voltage characteristics of the radiation-induced leakage current (RILC) and the electrical stress-induced leakage current (SILC) are very similar. Both currents comprise a dc component due to trap-assisted tunneling, and a transient component attributed to the tunnel charging/discharging of careers. Current-voltage and current-time data suggest essentially the same degradation mechanisms for both the RILC and SILC in ultra-thin oxides. A quadratic relationship between the X-ray dose and the equivalent charge fluence that induces the same amount of degradation is established.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/61950
ISSN: 00381101
DOI: 10.1016/S0038-1101(00)00037-X
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