Please use this identifier to cite or link to this item:
|Title:||Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory||Authors:||Pu, J.
Floating gate (FG)
Silicon carbide (SiC-3C)
Silicon carbide (Sic-3C)
|Issue Date:||Jul-2008||Citation:||Pu, J., Kim, S.-J., Lee, S.-H., Kim, Y.-S., Kim, S.-T., Choi, K.-J., Cho, B.J. (2008-07). Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory. IEEE Electron Device Letters 29 (7) : 688-690. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000600||Abstract:||We propose a novel approach to engineering floating gates (FGs) of Flash memory cells, namely, carbon incorporation into polysilicon FGs. This technique demonstrated an improvement in retention and a larger program/ erase Vt window, particularly for smaller capacitance coupling ratio cells, which is important for future scaled Flash memory cells. © 2008 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82027||ISSN:||07413106||DOI:||10.1109/LED.2008.2000600|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 27, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.