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Kim Sun-Jung

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Full Name
Kim Sun-Jung
Variants
Kim, S.-J.
Kim, Sun Jung
Kim, S.J.
Kim, Sun-Jung
 
Main Affiliation
 
Faculty
 

Publications

Results 1-16 of 16 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
1Dec-2000Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide filmsAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
2Oct-2000Comparative study of radiation- and stress-induced leakage currents in thin gate oxidesAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
31-Jul-2000Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradationCho, B.J. ; Kim, S.J. ; Ling, C.H. ; Joo, M.-S.; Yeo, I.-S.
42000Does short wavelength lithography process degrade the integrity of thin gate oxide?Kim, S.J. ; Cho, B.J. ; Chong, P.F.; Chor, E.F. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
52008Evaluation of gadolinium oxide as a blocking layer of charge-trap flash memory cellPu, J. ; Kim, S.-J. ; Kim, Y.-S.; Cho, B.J.
6Oct-2004Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterpartsDing, S.-J. ; Hu, H.; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Du, A.Y.; Chin, A.; Kwong, D.-L.
728-Jun-2004Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory deviceWang, Y.Q.; Chen, J.H. ; Yoo, W.J. ; Yeo, Y.-C. ; Kim, S.J. ; Gupta, R.; Tan, Z.Y.L.; Kwong, D.-L.; Du, A.Y.; Balasubramanian, N.
8Dec-2003High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate DielectricsDing, S.-J. ; Hu, H.; Lim, H.F. ; Kim, S.J. ; Yu, X.F.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Chin, A.; Kwong, D.-L.
9Aug-2004Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectricKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Zhu, C. ; Yu, M.B.; Narayanan, B.; Chin, A.; Kwong, D.-L.
10Nov-2005Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF applicationYu, M.B.; Xiong, Y.Z.; Kim, S.-J. ; Balakumar, S.; Zhu, C. ; Li, M.-F. ; Cho, B.-J. ; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
11Sep-2005Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriersKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
12Jun-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, S.J. ; Cho, B.J. ; Li, M.F. ; Yu, X.; Zhu, C. ; Chin, A.; Kwong, D.-L.
131-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
142000Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate biasAng, Chew-Hoe; Ling, Chung-Ho ; Cheng, Zhi-Yuan ; Kim, Sun-Jung ; Cho, Byung-Jin 
15Apr-2001Reliability of thin gate oxides irradiated under X-ray lithography conditionsCho, B.J. ; Kim, S.J. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
16Jun-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Yu, X.; Li, M.-F. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Rustagi, S.C.; Chin, A.; Kwong, D.-L.