Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1767597
| Title: | Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device | Authors: | Wang, Y.Q. Chen, J.H. Yoo, W.J. Yeo, Y.-C. Kim, S.J. Gupta, R. Tan, Z.Y.L. Kwong, D.-L. Du, A.Y. Balasubramanian, N. |
Issue Date: | 28-Jun-2004 | Citation: | Wang, Y.Q., Chen, J.H., Yoo, W.J., Yeo, Y.-C., Kim, S.J., Gupta, R., Tan, Z.Y.L., Kwong, D.-L., Du, A.Y., Balasubramanian, N. (2004-06-28). Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device. Applied Physics Letters 84 (26) : 5407-5409. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1767597 | Abstract: | The formation of Ge nanocrystals in HfAlO high-k dielectric by co-sputtering of HfO 2, Al 2O 3 and GE was demonstrated. It was observed that using a high-k dielectric, NCs flash memory can achieve improving programming efficiency and data retention. The results show that Ge NCs were thermally stable in HfAlO matrix. A fabrication of a nonvolatile memory device employing Ge NCs embedded in HfAlO hihg-k dielectric shows an excellent memory effects. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82374 | ISSN: | 00036951 | DOI: | 10.1063/1.1767597 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
52
checked on Jul 2, 2020
WEB OF SCIENCETM
Citations
51
checked on Jul 2, 2020
Page view(s)
89
checked on Jun 28, 2020
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.