Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1767597
| Title: | Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device | Authors: | Wang, Y.Q. Chen, J.H. Yoo, W.J. Yeo, Y.-C. Kim, S.J. Gupta, R. Tan, Z.Y.L. Kwong, D.-L. Du, A.Y. Balasubramanian, N. |
Issue Date: | 28-Jun-2004 | Citation: | Wang, Y.Q., Chen, J.H., Yoo, W.J., Yeo, Y.-C., Kim, S.J., Gupta, R., Tan, Z.Y.L., Kwong, D.-L., Du, A.Y., Balasubramanian, N. (2004-06-28). Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device. Applied Physics Letters 84 (26) : 5407-5409. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1767597 | Abstract: | The formation of Ge nanocrystals in HfAlO high-k dielectric by co-sputtering of HfO 2, Al 2O 3 and GE was demonstrated. It was observed that using a high-k dielectric, NCs flash memory can achieve improving programming efficiency and data retention. The results show that Ge NCs were thermally stable in HfAlO matrix. A fabrication of a nonvolatile memory device employing Ge NCs embedded in HfAlO hihg-k dielectric shows an excellent memory effects. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82374 | ISSN: | 00036951 | DOI: | 10.1063/1.1767597 |
| Appears in Collections: | Staff Publications |
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