Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2945877
Title: Evaluation of gadolinium oxide as a blocking layer of charge-trap flash memory cell
Authors: Pu, J. 
Kim, S.-J. 
Kim, Y.-S.
Cho, B.J.
Issue Date: 2008
Citation: Pu, J., Kim, S.-J., Kim, Y.-S., Cho, B.J. (2008). Evaluation of gadolinium oxide as a blocking layer of charge-trap flash memory cell. Electrochemical and Solid-State Letters 11 (9) : H252-H254. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2945877
Abstract: A rare-earth oxide, Gd2 O3, is evaluated for the application of the blocking layer in polysilicon-oxide-silicon nitride-oxide-silicon-type flash memory cell devices because of its high conduction-band offset and reasonably large κ value. In a Gd2 O3 Si3 N4 SiO2 dielectric stack, a monoclinic-structured Gd2 O3 shows the advantage of faster program/erase speed with comparable charge retention when compared to a conventional Al2 O3 blocking layer. Such performance makes Gd2 O3 a promising high- κ material for the blocking layer in charge-trap flash memory devices. © 2008 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55916
ISSN: 10990062
DOI: 10.1149/1.2945877
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