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Title: Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF application
Authors: Yu, M.B.
Xiong, Y.Z.
Kim, S.-J. 
Balakumar, S.
Zhu, C. 
Li, M.-F. 
Cho, B.-J. 
Lo, G.Q.
Balasubramanian, N.
Kwong, D.-L.
Keywords: Cu/low-κ backend
Metal-insulator-metal (MIM) capacitor
Radio frequency (RF) application
Resonant frequency
Issue Date: Nov-2005
Citation: Yu, M.B., Xiong, Y.Z., Kim, S.-J., Balakumar, S., Zhu, C., Li, M.-F., Cho, B.-J., Lo, G.Q., Balasubramanian, N., Kwong, D.-L. (2005-11). Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF application. IEEE Electron Device Letters 26 (11) : 793-795. ScholarBank@NUS Repository.
Abstract: We demonstrate a high-performance metal-high κ insulator-metal (MIM) capacitor integrated with a Cu/low-κ backend interconnection. The high-κ used was laminated HfO2-Al 2O3 with effective κ ∼ 19 and the low-κ dielectric used was Black Diamond with κ ∼ 2.9. The MIM capacitor (∼ 13.4 fF/μm2) achieved a Q-factor ∼ 53 at 2.5 GHz and 11.7 pF. The resonant frequency fr was 21% higher in comparison to an equivalently integrated Si3N4-MIM capacitor (∼ 0.93 fF/μm2) having similar capacitance 11.2 pF. The impacts of high-κ insulator and low-κ interconnect dielectric on the mechanism for resonant frequency improvement are distinguished using equivalent circuit analysis. This letter suggests that integrated high-κ MIM could be a promising alternative capacitor structure for future high-performance RF applications. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2005.857694
Appears in Collections:Staff Publications

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