Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.857694
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dc.titleIntegrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF application
dc.contributor.authorYu, M.B.
dc.contributor.authorXiong, Y.Z.
dc.contributor.authorKim, S.-J.
dc.contributor.authorBalakumar, S.
dc.contributor.authorZhu, C.
dc.contributor.authorLi, M.-F.
dc.contributor.authorCho, B.-J.
dc.contributor.authorLo, G.Q.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:30:39Z
dc.date.available2014-10-07T04:30:39Z
dc.date.issued2005-11
dc.identifier.citationYu, M.B., Xiong, Y.Z., Kim, S.-J., Balakumar, S., Zhu, C., Li, M.-F., Cho, B.-J., Lo, G.Q., Balasubramanian, N., Kwong, D.-L. (2005-11). Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF application. IEEE Electron Device Letters 26 (11) : 793-795. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.857694
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82546
dc.description.abstractWe demonstrate a high-performance metal-high κ insulator-metal (MIM) capacitor integrated with a Cu/low-κ backend interconnection. The high-κ used was laminated HfO2-Al 2O3 with effective κ ∼ 19 and the low-κ dielectric used was Black Diamond with κ ∼ 2.9. The MIM capacitor (∼ 13.4 fF/μm2) achieved a Q-factor ∼ 53 at 2.5 GHz and 11.7 pF. The resonant frequency fr was 21% higher in comparison to an equivalently integrated Si3N4-MIM capacitor (∼ 0.93 fF/μm2) having similar capacitance 11.2 pF. The impacts of high-κ insulator and low-κ interconnect dielectric on the mechanism for resonant frequency improvement are distinguished using equivalent circuit analysis. This letter suggests that integrated high-κ MIM could be a promising alternative capacitor structure for future high-performance RF applications. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.857694
dc.sourceScopus
dc.subjectCu/low-κ backend
dc.subjectHigh-κ
dc.subjectMetal-insulator-metal (MIM) capacitor
dc.subjectRadio frequency (RF) application
dc.subjectResonant frequency
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.857694
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume26
dc.description.issue11
dc.description.page793-795
dc.description.codenEDLED
dc.identifier.isiut000232821500005
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