Please use this identifier to cite or link to this item:
|Title:||Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF application|
Metal-insulator-metal (MIM) capacitor
Radio frequency (RF) application
|Citation:||Yu, M.B., Xiong, Y.Z., Kim, S.-J., Balakumar, S., Zhu, C., Li, M.-F., Cho, B.-J., Lo, G.Q., Balasubramanian, N., Kwong, D.-L. (2005-11). Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF application. IEEE Electron Device Letters 26 (11) : 793-795. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.857694|
|Abstract:||We demonstrate a high-performance metal-high κ insulator-metal (MIM) capacitor integrated with a Cu/low-κ backend interconnection. The high-κ used was laminated HfO2-Al 2O3 with effective κ ∼ 19 and the low-κ dielectric used was Black Diamond with κ ∼ 2.9. The MIM capacitor (∼ 13.4 fF/μm2) achieved a Q-factor ∼ 53 at 2.5 GHz and 11.7 pF. The resonant frequency fr was 21% higher in comparison to an equivalently integrated Si3N4-MIM capacitor (∼ 0.93 fF/μm2) having similar capacitance 11.2 pF. The impacts of high-κ insulator and low-κ interconnect dielectric on the mechanism for resonant frequency improvement are distinguished using equivalent circuit analysis. This letter suggests that integrated high-κ MIM could be a promising alternative capacitor structure for future high-performance RF applications. © 2005 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 12, 2019
WEB OF SCIENCETM
checked on Jan 2, 2019
checked on Dec 22, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.