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Thye Shen, Andrew Wee

rp02822

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Full Name
Thye Shen, Andrew Wee
Variants
Wee, A.T.
Wee, A.T.S.
Wee A.T.S.
Thye Shen Wee, A.
Wee, A.T.S
Thye-Shen Wee, A.
Wee A.T.S
Wee, S.
Wee, A.T.-S.
Wee, A.T.A.
WEE, ANDREW THYE SHEN
Wee, T.S.
Wee, A.
Wee, Andrew T.S.
Wee, T.S.A.
Wee Thye Shen, Andrew
 
Main Affiliation
 
Faculty
 
Email
phyweets@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Date Issued:  [2000 TO 2009]
Date Issued:  2000

Results 1-20 of 21 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
129-May-2000Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depthsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A.; Chan, L.; Lu, Y.F.; Song, W.D.; Chua, L.H.
22000Application of excimer laser annealing in the formation of ultra-shallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
323-Oct-2000Compositional mapping of the argon-methane-hydrogen system for polycrystalline to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition systemLin, T. ; Yu, G.Y. ; Wee, A.T.S. ; Shen, Z.X. ; Loh, K.P. 
411-Dec-2000Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrixJie, Y.X. ; Xiong, Y.N.; Wee, A.T.S. ; Huan, C.H.A. ; Ji, W. 
52000Effect of ITO carrier concentration on the performance of organic light-emitting diodesZhu, F.; Zhang, K.; Huan, C.H.A. ; Wee, A.T.S. ; Guenther, E.; Jin, C.S.
6Jun-2000Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealingTan, L.S. ; Prakash, S. ; Ng, K.M.; Ramam, A. ; Chua, S.J. ; Wee, A.T.S. ; Lim, S.L. 
7Sep-2000High resolution transmission electron microscopy study of the initial growth of diamond on siliconLin, T.; Loh, K.P. ; Wee, A.T.S. ; Shen, Z.X. ; Lin, J. ; Lai, C.H. ; Gao, Q.J.; Zhang, T.J.
8Dec-2000Improved NiSi salicide process using presilicide N2 + implant for MOSFETsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Wee, A.T.S. ; Chan, L.
91-Nov-2000Indium tin oxide films prepared by radio frequency magnetron sputtering method at a low processing temperatureZhang, K.; Zhu, F.; Huan, C.H.A. ; Wee, A.T.S. 
1015-Nov-2000Influence of annealing temperature on ferroelectric properties of SrBi2Ta2O9 thin films prepared by off-axis radio frequency magnetron sputteringTay, S.T.; Jiang, X.H.; Huan, C.H.A. ; Wee, A.T.S. ; Liu, R. 
1131-Jan-2000Investigation of annealing effects on indium tin oxide thin films by electron energy loss spectroscopyZhu, F.; Huan, C.H.A. ; Zhang, K.; Wee, A.T.S. 
126-Nov-2000Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Lu, Y.F. ; Wee, A.T.S. ; Osipowicz, T. ; Seng, H.L. ; See, A.; Dai, J.-Y.
13Aug-2000Miscibility of carboxyl-containing polysiloxane/poly(vinylpyridine) blendsLi, X.; Goh, S.H. ; Lai, Y.H. ; Wee, A.T.S. 
142000Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealingPrakash, S. ; Tan, L.S. ; Ng, K.M.; Raman, A.; Chua, S.J. ; Wee, A.T.S. ; Lim, S.L. 
1518-Sep-2000Plasma-induced damage to n-type GaNChoi, H.W.; Chua, S.J. ; Raman, A.; Pan, J.S.; Wee, A.T.S. 
162000Raman shift and broadening in stress-minimized Ge nanocrystals in silicon oxide matrixJie, Y.X. ; Huan, Cha ; Wee, A.T.S. ; Shen, Z.X. 
171-Jan-2000Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor depositionChoi, W.K. ; Chen, J.H. ; Bera, L.K. ; Feng, W.; Pey, K.L. ; Mi, J.; Yang, C.Y.; Ramam, A. ; Chua, S.J. ; Pan, J.S. ; Wee, A.T.S. ; Liu, R. 
182000The use of sample rotation in SIMS profiling of Ta barrier layers to Cu diffusionLiu, R. ; Wee, A.T.S. ; Liu, L. ; Hao, G. 
1924-Jan-2000Tungsten-carbon thin films deposited using screen grid technique in an electron cyclotron resonance chemical vapour deposition systemRusli; Yoon, S.F.; Yang, H.; Ahn, J.; Huang, Q.F.; Zhang, Q.; Guo, Y.P. ; Yang, C.Y. ; Teo, E.J. ; Wee, A.T.S. ; Huan, A.C.H. ; Watt, F. 
202000Ultra shallow depth profiling of B deltas in Si using a CAMECA IMS 6fNg, C.M.; Wee, A.T.S. ; Huan, C.H.A. ; See, A.