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|Title:||Compositional mapping of the argon-methane-hydrogen system for polycrystalline to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition system||Authors:||Lin, T.
|Issue Date:||23-Oct-2000||Citation:||Lin, T.,Yu, G.Y.,Wee, A.T.S.,Shen, Z.X.,Loh, K.P. (2000-10-23). Compositional mapping of the argon-methane-hydrogen system for polycrystalline to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition system. Applied Physics Letters 77 (17) : 2692-2694. ScholarBank@NUS Repository.||Abstract:||The transition in diamond crystal morphology from well-faceted microcrystalline to nanocrystalline phases as a function of increasing argon (Ar) concentration has been studied in a hot-filament chemical vapor deposition (HFCVD) system. The range of Ar concentration in a Ar-methane-hydrogen mixture that permits well-faceted diamond growth is up to 90%. At a concentration of 95.5%, a marked transition into nanocrystalline diamond phase could be observed. Although no graphitic phases were observed by transmission electron microscope and x-ray diffraction up to 95.5% Ar concentration, Raman analyses revealed a proportionate increase in amorphous carbon content with an increase in Ar concentration. The addition of Ar appears to create an electron-rich gas environment because a plasma can be readily discharged by applying a bias to the sample. Analysis of the plasma by optical emission spectroscopy revealed a linear correlation between Ar addition and the occurrence of C2 dimers in the plasma. Our results identified the narrow Ar-methane-hydrogen composition window that is effective for the growth of thick and smooth nanocrystalline diamond in HFCVD. © 2000 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/93347||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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