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|Title:||Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions||Authors:||Chong, Y.F.
|Issue Date:||6-Nov-2000||Citation:||Chong, Y.F.,Pey, K.L.,Lu, Y.F.,Wee, A.T.S.,Osipowicz, T.,Seng, H.L.,See, A.,Dai, J.-Y. (2000-11-06). Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions. Applied Physics Letters 77 (19) : 2994-2996. ScholarBank@NUS Repository.||Abstract:||We have investigated the effect of laser annealing on the recrystallization of the preamorphized layer during the formation of ultrashallow p+/n junctions. The results from channeling Rutherford backscattering spectrometry clearly indicate that the preamorphized layer has been completely annealed with a single-pulse laser irradiation at 0.5 J/cm2. These data are further verified by high-resolution cross-sectional transmission electron microscopy. It is proposed that the preamorphized layer has recrystallized to a single-crystalline structure via liquid-phase epitaxy. No observable extended defects are present in the recrystallized region after laser annealing. © 2000 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80681||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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