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Title: Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrix
Authors: Jie, Y.X. 
Xiong, Y.N.
Wee, A.T.S. 
Huan, C.H.A. 
Ji, W. 
Issue Date: 11-Dec-2000
Citation: Jie, Y.X.,Xiong, Y.N.,Wee, A.T.S.,Huan, C.H.A.,Ji, W. (2000-12-11). Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrix. Applied Physics Letters 77 (24) : 3926-3928. ScholarBank@NUS Repository.
Abstract: The optical nonlinearity and excited carrier lifetime in Ge nanocrystals (nc-Ge) embedded in a silica matrix have been investigated by means of single beam z scan and pump-probe techniques with laser pulse duration of 35 ps and 532 nm wavelength. The nc-Ge samples were prepared using magnetron cosputtering and postgrowth annealing at 800 °C. The nonlinear absorption coefficient α2 and refractive index n2 were found to range between 190 and 760 cm/GW, and 0.0026 and 0.0082 cm2/GW, respectively, and be proportional to the Ge concentration in the film. The confined excited carriers were found to depopulate with a lifetime of ∼70 ps. The nonlinearity in Ge nanocrystals is deduced to originate mainly from excited carrier absorption, with two-photon absorption providing a small contribution. © 2000 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
Appears in Collections:Staff Publications

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