Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/96280
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dc.titleDynamics of optical nonlinearity of Ge nanocrystals in a silica matrix
dc.contributor.authorJie, Y.X.
dc.contributor.authorXiong, Y.N.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorHuan, C.H.A.
dc.contributor.authorJi, W.
dc.date.accessioned2014-10-16T09:21:36Z
dc.date.available2014-10-16T09:21:36Z
dc.date.issued2000-12-11
dc.identifier.citationJie, Y.X.,Xiong, Y.N.,Wee, A.T.S.,Huan, C.H.A.,Ji, W. (2000-12-11). Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrix. Applied Physics Letters 77 (24) : 3926-3928. ScholarBank@NUS Repository.
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96280
dc.description.abstractThe optical nonlinearity and excited carrier lifetime in Ge nanocrystals (nc-Ge) embedded in a silica matrix have been investigated by means of single beam z scan and pump-probe techniques with laser pulse duration of 35 ps and 532 nm wavelength. The nc-Ge samples were prepared using magnetron cosputtering and postgrowth annealing at 800 °C. The nonlinear absorption coefficient α2 and refractive index n2 were found to range between 190 and 760 cm/GW, and 0.0026 and 0.0082 cm2/GW, respectively, and be proportional to the Ge concentration in the film. The confined excited carriers were found to depopulate with a lifetime of ∼70 ps. The nonlinearity in Ge nanocrystals is deduced to originate mainly from excited carrier absorption, with two-photon absorption providing a small contribution. © 2000 American Institute of Physics.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleApplied Physics Letters
dc.description.volume77
dc.description.issue24
dc.description.page3926-3928
dc.description.codenAPPLA
dc.identifier.isiutNOT_IN_WOS
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