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|Title:||Plasma-induced damage to n-type GaN||Authors:||Choi, H.W.
|Issue Date:||18-Sep-2000||Citation:||Choi, H.W.,Chua, S.J.,Raman, A.,Pan, J.S.,Wee, A.T.S. (2000-09-18). Plasma-induced damage to n-type GaN. Applied Physics Letters 77 (12) : 1795-1797. ScholarBank@NUS Repository.||Abstract:||The effects of plasma etching on 1/f noise and photoluminescence (PL) characteristics of n-GaN have been investigated. A reduction of 1/f noise was observed after plasma exposure, a result of enhanced passivation of the reactive surface. This is attributed to the removal of carbon and the creation of a Ga-rich surface by the etching process. Nevertheless, the formation of nonradiative recombination centers impaired the PL intensity. Reconstruction of a stoichiometric surface was achieved by annealing. This induced the incorporation of carbon into GaN, deteriorating the PL performance further, but it could be restored by a chemical treatment of 10:1 HF:H2O. © 2000 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80992||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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