Ultra shallow depth profiling of B deltas in Si using a CAMECA IMS 6f

Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.405374

Title:	Ultra shallow depth profiling of B deltas in Si using a CAMECA IMS 6f
Authors:	Ng, C.M. Wee, A.T.S. Huan, C.H.A. See, A.
Keywords:	Boron deltas Low energy profiling Oxygen flooding Sample rotation Secondary ion mass spectrometry
Issue Date:	2000
Citation:	Ng, C.M., Wee, A.T.S., Huan, C.H.A., See, A. (2000). Ultra shallow depth profiling of B deltas in Si using a CAMECA IMS 6f. Proceedings of SPIE - The International Society for Optical Engineering 4227 : 90-97. ScholarBank@NUS Repository. https://doi.org/10.1117/12.405374
Abstract:	Secondary ion mass spectrometry (SIMS) depth profiling is an important technique for the characterization of ultra shallow junctions, thin gate oxides and other interfacial layers in modern wafer fabrication. In this study, a CAMECA IMS 6f SIMS instrument is used to study the various factors that may affect the depth resolution in ultra shallow depth profiling of a B delta doped Si standard sample. Several analyses using 0.5 - 2.0 keV O2 + have been performed with and without oxygen flooding and sample rotation. The roughening of the sputtered crater bottom is one factor that degrades the depth resolution in low energy depth profiling (
Source Title:	Proceedings of SPIE - The International Society for Optical Engineering
URI:	http://scholarbank.nus.edu.sg/handle/10635/98946
ISSN:	0277786X
DOI:	10.1117/12.405374
Appears in Collections:	Staff Publications

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