Please use this identifier to cite or link to this item:
|Title:||Ultra shallow depth profiling of B deltas in Si using a CAMECA IMS 6f|
Low energy profiling
Secondary ion mass spectrometry
|Source:||Ng, C.M., Wee, A.T.S., Huan, C.H.A., See, A. (2000). Ultra shallow depth profiling of B deltas in Si using a CAMECA IMS 6f. Proceedings of SPIE - The International Society for Optical Engineering 4227 : 90-97. ScholarBank@NUS Repository. https://doi.org/10.1117/12.405374|
|Abstract:||Secondary ion mass spectrometry (SIMS) depth profiling is an important technique for the characterization of ultra shallow junctions, thin gate oxides and other interfacial layers in modern wafer fabrication. In this study, a CAMECA IMS 6f SIMS instrument is used to study the various factors that may affect the depth resolution in ultra shallow depth profiling of a B delta doped Si standard sample. Several analyses using 0.5 - 2.0 keV O2 + have been performed with and without oxygen flooding and sample rotation. The roughening of the sputtered crater bottom is one factor that degrades the depth resolution in low energy depth profiling (|
|Source Title:||Proceedings of SPIE - The International Society for Optical Engineering|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 8, 2018
WEB OF SCIENCETM
checked on Feb 7, 2018
checked on Apr 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.