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|Title:||Improved NiSi salicide process using presilicide N2 + implant for MOSFETs||Authors:||Lee, P.S.
|Issue Date:||Dec-2000||Citation:||Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Wee, A.T.S., Chan, L. (2000-12). Improved NiSi salicide process using presilicide N2 + implant for MOSFETs. IEEE Electron Device Letters 21 (12) : 566-568. ScholarBank@NUS Repository. https://doi.org/10.1109/55.887467||Abstract:||An improved Ni salicide process has been developed by incorporating nitrogen (N2 +) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750 °C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi2 phase was delayed, likely due to a change in the interfacial energy. The electrical results of N2 + implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N2 + implant.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80577||ISSN:||07413106||DOI:||10.1109/55.887467|
|Appears in Collections:||Staff Publications|
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