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Chunxiang Zhu

rp01634

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Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Results 161-180 of 218 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
1612009Palladium-induced lateral crystallization of amorphous-germanium thin film on insulating substrateXie, R.; Phung, T.H.; Yu, M.; Oh, S.A.; Tripathy, S.; Zhu, C. 
162Oct-2009Performance Improvement of Sm2O3 MIM capacitors by using plasma treatment after dielectric formationYang, J.-J.; Chen, J.-D. ; Wise, R.; Yeo, Y.-C. ; Zhu, C. 
163Apr-2003Physical and electrical characteristics of HfN gate electrode for advanced MOS devicesYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C. ; Tung, C.H.; Du, A.Y.; Wang, W.D.; Chi, D.Z.; Kwong, D.-L.
164Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
1651-Jul-2003Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applicationsHu, H.; Zhu, C. ; Lu, Y.F. ; Wu, Y.H. ; Liew, T. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. ; Yakovlev, N.
62009Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applicationsChen, J.-D. ; Yang, J.-J.; Wise, R.; Steinmann, P.; Yu, M.-B.; Zhu, C. ; Yeo, Y.-C. 
72009Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architectureFu, J.; Jiang, Y.; Singh, N.; Zhu, C.X. ; Lo, G.Q.; Kwong, D.L.
8Oct-2008Polymer electronic memories: Materials, devices and mechanismsLing, Q.-D. ; Liaw, D.-J.; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
924-Aug-2007Polymer memories: Bistable electrical switching and device performanceLing, Q.-D. ; Liaw, D.-J.; Teo, E.Y.-H. ; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
109-Sep-2010Preparation and memory performance of a nanoaggregated dispersed red 1-functionalized poly (N-vinylcarbazole) film via solution-phase self-assemblyZhuang, X.-D.; Chen, Y.; Liu, G. ; Zhang, B.; Neoh, K.-G. ; Kang, E.-T. ; Zhu, C.-X. ; Li, Y.-X.; Niu, L.-J.
1115-Jan-2012Push-Pull archetype of reduced graphene oxide functionalized with polyfluorene for nonvolatile rewritable memoryZhang, B.; Chen, Y.; Liu, G. ; Xu, L.-Q.; Chen, J.; Zhu, C.-X. ; Neoh, K.-G. ; Kang, E.-T. 
12Jun-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, S.J. ; Cho, B.J. ; Li, M.F. ; Yu, X.; Zhu, C. ; Chin, A.; Kwong, D.-L.
132010Rapid-melting-growth of Ge on insulator using cobalt (Co) induced-crystallized Ge as the seed for lateral growthPhung, T.H.; Chen, M.; Kang, H.J.; Zhang, C. ; Yu, M.; Zhu, C. 
142007Reliability analysis of thin HfO2/SiO2 gate dielectric stackSamanta, P.; Zhu, C. ; Chan, M.
152003RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic SimulationChin, A.; Chan, K.T.; Huang, C.H.; Chen, C.; Liang, V.; Chen, J.K.; Chien, S.C.; Sun, S.W.; Duh, D.S.; Lin, W.J.; Zhu, C. ; Li, M.F. ; McAlister, S.P.; Kwong, D.-L.
16Jun-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Yu, X.; Li, M.-F. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Rustagi, S.C.; Chin, A.; Kwong, D.-L.
172003Robust HfN Metal Gate Electrode for Advanced MOS Devices ApplicationYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C.X. ; Kwong, D.-L.; Tung, C.H.; Bera, K.L.; Leo, C.J.
1817-Mar-2009Schottky barrier source/drain n-mosfet using ytterbium silicideZHU, SHIYANG ; CHEN, JINGDE ; LEE, SUNGJOO ; LI, MING FU ; SINGH, JAGAR; ZHU, CHUNXIANG ; KWONG, DIM-LEE 
192004Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodesZhu, S. ; Chen, J. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Li, M.F. ; Lee, S.J. ; Zhu, C. ; Chan, D.S.H. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
20May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.