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|Title:||Push-Pull archetype of reduced graphene oxide functionalized with polyfluorene for nonvolatile rewritable memory||Authors:||Zhang, B.
functionalization of polymers
high performance polymers
reduced graphene oxide
rewritable memory effect
|Issue Date:||15-Jan-2012||Citation:||Zhang, B., Chen, Y., Liu, G., Xu, L.-Q., Chen, J., Zhu, C.-X., Neoh, K.-G., Kang, E.-T. (2012-01-15). Push-Pull archetype of reduced graphene oxide functionalized with polyfluorene for nonvolatile rewritable memory. Journal of Polymer Science, Part A: Polymer Chemistry 50 (2) : 378-387. ScholarBank@NUS Repository. https://doi.org/10.1002/pola.25043||Abstract:||A solution-processable PFTPA-convalently grafted reduced graphene oxide (RGO-PFTPA) was synthesized by the 1,3-dipolar cycloaddition of azomethine ylide. Bistable electrical switching and nonvolatile rewritable memory effects were demonstrated in a sandwich structure of indium tin oxide/RGO-PFTPA/Al. The switch-on voltage of the as-fabricated device was around -1.4 V, and the ON/OFF-state current ratio was more than 10 3. The ON-OFF transition process is reversible because the application of a high enough positive voltage can induce the reverse transfer of electrons, reducing the conductivity back to its initial OFF state. Both the OFF and ON states are accessible and very stable under a constant voltage stress of -1 V for up to 3 h, or under a pulse voltage stress of -1 V for up to 10 8 continuous read cycles (pulse period = 2 μs, pulse width = 1 μs). © 2011 Wiley Periodicals, Inc.||Source Title:||Journal of Polymer Science, Part A: Polymer Chemistry||URI:||http://scholarbank.nus.edu.sg/handle/10635/82949||ISSN:||0887624X||DOI:||10.1002/pola.25043|
|Appears in Collections:||Staff Publications|
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