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|Title:||Reliability analysis of thin HfO2/SiO2 gate dielectric stack||Authors:||Samanta, P.
|Issue Date:||2007||Citation:||Samanta, P.,Zhu, C.,Chan, M. (2007). Reliability analysis of thin HfO2/SiO2 gate dielectric stack. Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD : 142-145. ScholarBank@NUS Repository. https://doi.org/10.1109/IWPSD.2007.4472471||Abstract:||Electrical characteristics of hafnium oxide (HfO2/silicon dioxide (SiO2) gate dielectric stack during both constant voltage stress (CVS) and constant current stress (CCS) have been experimentally investigated with varying thickness of the HfO2 layer. The generation kinetics of bulk, interface and border trapped charges have been discussed showing a correlation among them. Nature of intrinsic hole traps in SiO 2 has also been studied from an independent charge relaxation experiment. In addition, time-dependent dielectric breakdown (TDDB) has been studied during CVS. © 2007 IEEE.||Source Title:||Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD||URI:||http://scholarbank.nus.edu.sg/handle/10635/84132||ISBN:||9781424417285||DOI:||10.1109/IWPSD.2007.4472471|
|Appears in Collections:||Staff Publications|
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