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|Title:||Rapid-melting-growth of Ge on insulator using cobalt (Co) induced-crystallized Ge as the seed for lateral growth||Authors:||Phung, T.H.
|Issue Date:||2010||Citation:||Phung, T.H.,Chen, M.,Kang, H.J.,Zhang, C.,Yu, M.,Zhu, C. (2010). Rapid-melting-growth of Ge on insulator using cobalt (Co) induced-crystallized Ge as the seed for lateral growth. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 1578-1580. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2010.5667453||Abstract:||A new type of crystal seed, polycrystalline Ge (poly-Ge) formed by Co induced crystallization was used in the rapid-melting-growth (RMG) of Ge. With the poly-Ge seed, the grain size of Ge films obtained was significantly larger than the one using single crystal epitaxial Si as crystal seed and the one without any crystal seed. High quality (almost single crystal) Ge was obtained on 1 mm x 1 mm square structure and single crystal Ge was obtained on 5 μm wide Ge wires by the RMG method with Co-induced poly-Ge as the crystal seed. ©2010 IEEE.||Source Title:||ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/71548||ISBN:||9781424457984||DOI:||10.1109/ICSICT.2010.5667453|
|Appears in Collections:||Staff Publications|
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