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Chunxiang Zhu

rp01634

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Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Refined By:
Author:  Zhu, C.X.
Department:  COLLEGE OF DESIGN AND ENGINEERING
Date Issued:  [2002 TO 2009]

Results 141-160 of 196 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
141Apr-2003Physical and electrical characteristics of HfN gate electrode for advanced MOS devicesYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C. ; Tung, C.H.; Du, A.Y.; Wang, W.D.; Chi, D.Z.; Kwong, D.-L.
142Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
1431-Jul-2003Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applicationsHu, H.; Zhu, C. ; Lu, Y.F. ; Wu, Y.H. ; Liew, T. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. ; Yakovlev, N.
1442009Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applicationsChen, J.-D. ; Yang, J.-J.; Wise, R.; Steinmann, P.; Yu, M.-B.; Zhu, C. ; Yeo, Y.-C. 
1452009Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architectureFu, J.; Jiang, Y.; Singh, N.; Zhu, C.X. ; Lo, G.Q.; Kwong, D.L.
146Oct-2008Polymer electronic memories: Materials, devices and mechanismsLing, Q.-D. ; Liaw, D.-J.; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
147Oct-2008Polymer electronic memories: Materials, devices and mechanismsLing, Q.-D. ; Liaw, D.-J.; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
14824-Aug-2007Polymer memories: Bistable electrical switching and device performanceLing, Q.-D. ; Liaw, D.-J.; Teo, E.Y.-H. ; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
14924-Aug-2007Polymer memories: Bistable electrical switching and device performanceLing, Q.-D. ; Liaw, D.-J.; Teo, E.Y.-H. ; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
150Jun-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, S.J. ; Cho, B.J. ; Li, M.F. ; Yu, X.; Zhu, C. ; Chin, A.; Kwong, D.-L.
1512007Reliability analysis of thin HfO2/SiO2 gate dielectric stackSamanta, P.; Zhu, C. ; Chan, M.
1522003RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic SimulationChin, A.; Chan, K.T.; Huang, C.H.; Chen, C.; Liang, V.; Chen, J.K.; Chien, S.C.; Sun, S.W.; Duh, D.S.; Lin, W.J.; Zhu, C. ; Li, M.F. ; McAlister, S.P.; Kwong, D.-L.
153Jun-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Yu, X.; Li, M.-F. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Rustagi, S.C.; Chin, A.; Kwong, D.-L.
1542003Robust HfN Metal Gate Electrode for Advanced MOS Devices ApplicationYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C.X. ; Kwong, D.-L.; Tung, C.H.; Bera, K.L.; Leo, C.J.
15517-Mar-2009Schottky barrier source/drain n-mosfet using ytterbium silicideZHU, SHIYANG ; CHEN, JINGDE ; LEE, SUNGJOO ; LI, MING FU ; SINGH, JAGAR; ZHU, CHUNXIANG ; KWONG, DIM-LEE 
1562004Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodesZhu, S. ; Chen, J. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Li, M.F. ; Lee, S.J. ; Zhu, C. ; Chan, D.S.H. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
157May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
1582004Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devicesLi, M.F. ; Yu, H.Y. ; Hou, Y.T. ; Kang, J.F. ; Wang, X.P.; Shen, C.; Ren, C.; Yeo, Y.C. ; Zhu, C.X. ; Chan, D.S.H. ; Chin, A.; Kwong, D.L.
159May-2008Si-nanowire based gate-all-around nonvolatile SONOS memory cellFu, J.; Singh, N.; Buddharaju, K.D.; Teo, S.H.G.; Shen, C.; Jiang, Y.; Zhu, C.X. ; Yu, M.B.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.L.; Gnani, E.; Baccarani, G.
1602008Si-nanowire TAHOS TaN/AI2O3/HfO2/SiO 2/Si nonvolatile memory cellFu, J.; Singh, N.; Yang, B.; Zhu, C.X. ; Lo, G.Q.; Kwong, D.L.