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|Title:||Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices||Authors:||Li, M.F.
|Issue Date:||2004||Citation:||Li, M.F.,Yu, H.Y.,Hou, Y.T.,Kang, J.F.,Wang, X.P.,Shen, C.,Ren, C.,Yeo, Y.C.,Zhu, C.X.,Chan, D.S.H.,Chin, A.,Kwong, D.L. (2004). Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 366-371. ScholarBank@NUS Repository.||Abstract:||Based on our recent investigation on HfO 2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO 2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically, assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift. © 2004 IEEE.||Source Title:||International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT||URI:||http://scholarbank.nus.edu.sg/handle/10635/84162|
|Appears in Collections:||Staff Publications|
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