Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/84162

Title:	Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices
Authors:	Li, M.F. Yu, H.Y. Hou, Y.T. Kang, J.F. Wang, X.P. Shen, C. Ren, C. Yeo, Y.C. Zhu, C.X. Chan, D.S.H. Chin, A. Kwong, D.L.
Issue Date:	2004
Citation:	Li, M.F.,Yu, H.Y.,Hou, Y.T.,Kang, J.F.,Wang, X.P.,Shen, C.,Ren, C.,Yeo, Y.C.,Zhu, C.X.,Chan, D.S.H.,Chin, A.,Kwong, D.L. (2004). Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 366-371. ScholarBank@NUS Repository.
Abstract:	Based on our recent investigation on HfO 2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO 2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically, assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift. © 2004 IEEE.
Source Title:	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
URI:	http://scholarbank.nus.edu.sg/handle/10635/84162
Appears in Collections:	Staff Publications

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