Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/84162
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dc.titleSelected topics on HfO 2 gate dielectrics for future ULSI CMOS devices
dc.contributor.authorLi, M.F.
dc.contributor.authorYu, H.Y.
dc.contributor.authorHou, Y.T.
dc.contributor.authorKang, J.F.
dc.contributor.authorWang, X.P.
dc.contributor.authorShen, C.
dc.contributor.authorRen, C.
dc.contributor.authorYeo, Y.C.
dc.contributor.authorZhu, C.X.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorChin, A.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2014-10-07T04:49:30Z
dc.date.available2014-10-07T04:49:30Z
dc.date.issued2004
dc.identifier.citationLi, M.F.,Yu, H.Y.,Hou, Y.T.,Kang, J.F.,Wang, X.P.,Shen, C.,Ren, C.,Yeo, Y.C.,Zhu, C.X.,Chan, D.S.H.,Chin, A.,Kwong, D.L. (2004). Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 366-371. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84162
dc.description.abstractBased on our recent investigation on HfO 2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO 2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically, assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift. © 2004 IEEE.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
dc.description.volume1
dc.description.page366-371
dc.identifier.isiutNOT_IN_WOS
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