Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84162
Title: Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices
Authors: Li, M.F. 
Yu, H.Y. 
Hou, Y.T. 
Kang, J.F. 
Wang, X.P.
Shen, C.
Ren, C.
Yeo, Y.C. 
Zhu, C.X. 
Chan, D.S.H. 
Chin, A.
Kwong, D.L.
Issue Date: 2004
Source: Li, M.F.,Yu, H.Y.,Hou, Y.T.,Kang, J.F.,Wang, X.P.,Shen, C.,Ren, C.,Yeo, Y.C.,Zhu, C.X.,Chan, D.S.H.,Chin, A.,Kwong, D.L. (2004). Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 366-371. ScholarBank@NUS Repository.
Abstract: Based on our recent investigation on HfO 2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO 2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically, assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift. © 2004 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
URI: http://scholarbank.nus.edu.sg/handle/10635/84162
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