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| | Issue Date | Title | Author(s) |
| 1 | Aug-2001 | Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers | Samanta, S.K.; Maikap, S.; Bera, L.K. ; Banerjee, H.D.; Maiti, C.K. |
| 2 | 18-Sep-2000 | Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers | Senapati, B.; Samanta, S.K.; Maikap, S.; Bera, L.K. ; Maiti, C.K. |
| 3 | Feb-2002 | Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex | Samanta, S.K.; Bera, L.K. ; Benerjee, H.D.; Maiti, C.K. |
| 4 | 10-Jul-2000 | Electrical properties of rapid thermal oxides on Si1-x-yGexCy films | Bera, L.K. ; Choi, W.K. ; Feng, W.; Yang, C.Y.; Mi, J. |
| 5 | Aug-2001 | High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films | Bera, L.K. ; Choi, W.K. ; Tan, C.S.; Samanta, S.K.; Maiti, C.K. |
| 6 | 1-Mar-2003 | Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substrates | Samanta, S.K.; Chatterjee, S.; Maikap, S.; Bera, L.K. ; Banerjee, H.D.; Maiti, C.K. |
| 7 | Sep-2004 | Investigation of electrical properties of furnace grown gate oxide on strained-Si | Bera, L.K. ; Mathew, S.; Balasubramanian, N. ; Leitz, C.; Braithwaite, G.; Singaporewala, F.; Yap, J.; Carlin, J.; Langdo, T.; Lochtefeld, T.; Currie, M.; Hammond, R.; Fiorenza, J.; Badawi, H.; Bulsara, M. |
| 8 | 1-Jan-2002 | Microstructural characterization of rf sputtered polycrystalline silicon germanium films | Choi, W.K. ; Teh, L.K.; Bera, L.K. ; Chim, W.K. ; Wee, A.T.S. ; Jie, Y.X. |
| 9 | Nov-2001 | N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD | Tan, C.S.; Choi, W.K. ; Bera, L.K. ; Pey, K.L. ; Antoniadis, D.A.; Fitzgerald, E.A.; Currie, M.T.; Maiti, C.K. |
| 10 | Nov-2001 | Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films | Natarajan, A.; Bera, L.K. ; Choi, W.K. ; Osipowicz, T. ; Seng, H.L. |
| 11 | 15-Feb-2002 | Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films | Choi, W.K. ; Natarajan, A.; Bera, L.K. ; Wee, A.T.S. ; Liu, Y.J. |
| 12 | Jan-2003 | Reliability of ultrathin ( | Samanta, S.K.; Chatterjee, S.; Choi, W.K.; Bera, L.K. ; Banerjee, H.D.; Maiti, C.K. |
| 13 | Dec-2001 | Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films | Choi, W.K. ; Feng, W.; Bera, L.K. ; Yang, C.Y.; Mi, J. |
| 14 | Nov-2001 | Structural characterisation of polycrystalline SiGe thin film | Teh, L.K.; Choi, W.K. ; Bera, L.K. ; Chim, W.K. |
| 15 | 1-Jan-2000 | Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor deposition | Choi, W.K. ; Chen, J.H. ; Bera, L.K. ; Feng, W.; Pey, K.L. ; Mi, J.; Yang, C.Y.; Ramam, A. ; Chua, S.J. ; Pan, J.S. ; Wee, A.T.S. ; Liu, R. |
| 16 | 1-Jun-2000 | Structural characterization of rapid thermally oxidized silicon-germanium-carbon alloy films | Choi, W.K. ; Bera, L.K. ; Chen, J.H. ; Feng, W.; Pey, K.L. ; Yoong, H.; Mi, J.; Zhang, F.; Yang, C.Y. |
| 17 | Sep-2004 | Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film | Balasubramanian, M.; Bera, L.K. ; Mathew, S.; Balasubramanian, N. ; Lim, V.; Joo, M.S. ; Cho, B.J. |
