Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
 
 
Email
elecshd@nus.edu.sg
 

Results 141-160 of 269 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
141Apr-2003Localized oxide degradation in ultrathin gate dielectric and its statistical analysisLoh, W.Y. ; Cho, B.J. ; Li, M.F. ; Chan, D.S.H. ; Ang, C.H.; Zheng, J.Z.; Kwong, D.L.
1422007Low energy N2 ion bombardment for removal of (Hf O2) x (SiON)1-x in dilute HFHwang, W.S.; Cho, B.-J. ; Chan, D.S.H. ; Yoo, W.J.
143Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
144Oct-1998Low-frequency noise characterizattion of latent damage in thin oxides subjected to high-field impulse stressingChim, W.K. ; Yeo, B.P.; Lim, P.S.; Chan, D.S.H. 
145Oct-1998Low-frequency noise characterizattion of latent damage in thin oxides subjected to high-field impulse stressingChim, W.K. ; Yeo, B.P.; Lim, P.S.; Chan, D.S.H. 
146Sep-2005Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting trapsSa, N.; Kang, J.F.; Yang, H.; Liu, X.Y.; He, Y.D.; Han, R.Q.; Ren, C.; Yu, H.Y.; Chan, D.S.H. ; Kwong, D.-L.
147Mar-2006Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complexSong, Y.; Ling, Q.D. ; Zhu, C. ; Kang, E.T. ; Chan, D.S.H. ; Wang, Y.H.; Kwong, D.L.
1482008Metal carbides for band-edge work function metal gate CMOS devicesHwang, W.S.; Chan, D.S.H. ; Cho, B.J.
14923-Jan-1996Method and apparatus for measuring quantitative voltage contrastCHIM, WAI K. ; PHANG, JACOB C. H. ; CHAN, DANIEL S. H. 
150Oct-2004Microtomography and improved resolution in cathodoluminescence microscopy using confocal mirror opticsChan, D.S.H. ; Liu, Y.Y.; Phang, J.C.H. ; Rau, E.; Sennov, R.; Gostev, A.V.
151Dec-1992Modelling techniques for the quantification of some electron beam induced phenomenaChim, W.K. ; Chan, D.S.H. ; Low, T.S. ; Phang, J.C.H. ; Sim, K.S. ; Pey, K.L. ; Dinnis, A.R.; Holt, D.B.; Nakamae, K.; Schottler, M.
152Dec-1992Modelling techniques for the quantification of some electron beam induced phenomenaChim, W.K. ; Chan, D.S.H. ; Low, T.S. ; Phang, J.C.H. ; Sim, K.S. ; Pey, K.L. ; Dinnis, A.R.; Holt, D.B.; Nakamae, K.; Schottler, M.
153May-1998Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressingQin, W.H.; Chim, W.K. ; Chan, D.S.H. ; Lou, C.L.
154May-1998Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressingQin, W.H.; Chim, W.K. ; Chan, D.S.H. ; Lou, C.L.
1551997Modelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETsLou, C.L.; Qin, W.H.; Chim, W.K. ; Chan, D.S.H. 
1561997Modelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETsLou, C.L.; Qin, W.H.; Chim, W.K. ; Chan, D.S.H. 
1572008Molecular conformation-dependent memory effects in non-conjugated polymers with pendant carbazole moietiesLim, S.L.; Ling, Q. ; Eric Teo, Y.H. ; Zhu, C.X. ; Daniel Chan, S.H. ; Kang, E.T. ; Neon, K.G. 
158Apr-2008Multi-layer high-κ interpoly dielectric for floating gate flash memory devicesZhang, L.; He, W. ; Chan, D.S.H. ; Cho, B.J. 
1592008Nanowire FETs for Low Power CMOS Applications Featuring Novel Gate-All-Around Single Metal FUSI Gates with Dual φ m and v T Tune-abilityJiang, Y.; Liow, T.Y.; Singh, N.; Tan, L.H.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
1602008Near-infrared spectroscopic photon emission microscopy of 0.13 μm silicon nMOSFETs and pMOSFETsTan, S.L.; Teo, J.K.J.; Toh, K.H.; Isakov, D.; Chan, D.S.H. ; Koh, L.S.; Chua, C.M.; Phang, J.C.H.